Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-01-08
2008-01-08
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S029000, C438S099000, C438S781000, C257SE21259, C257SE51027
Reexamination Certificate
active
07316983
ABSTRACT:
The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate10by a heating means for heating a substrate, decreasing the pressure of a film formation chamber with a pressure decreasing means (a vacuum pump such as a turbo-molecular pump, a dry pump, or a cryopump) connected to the film formation chamber to 5×10−3Torr (0.665 Pa) or lower, preferably 1×10−3Torr (0.133 Pa) or lower, and carrying out film formation by depositing organic compound materials from deposition sources. In the film formation chamber, cleaning of deposition masks is carried out by plasma.
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Murakami Masakazu
Yamazaki Shunpei
Fish & Richardson P.C.
Ghyka Alexander
Semiconductor Energy Laboratory Co,. Ltd.
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