Film for copper diffusion barrier

Details Film for copper diffusion barrier Film for copper diffusion barrier

2007-01-16

2007-01-16

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C257SE21584

Reexamination Certificate

active

11234808

ABSTRACT:
The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

REFERENCES:
patent: 4656110 (1987-04-01), Yamazaki
patent: 5324690 (1994-06-01), Gelatos et al.
patent: 5654208 (1997-08-01), Harris et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 6100587 (2000-08-01), Merchant et al.
patent: 6197688 (2001-03-01), Simpson
patent: 6399484 (2002-06-01), Yamasaki et al.
patent: 6417092 (2002-07-01), Jain et al.
patent: 6424044 (2002-07-01), Han et al.
patent: 6774489 (2004-08-01), Russell et al.
patent: 6790767 (2004-09-01), Lee
patent: 2003/0001275 (2003-01-01), Sambucetti et al.
patent: 2003/0057553 (2003-03-01), DelaRosa et al.
patent: 2003/0068881 (2003-04-01), Xia et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0232514 (2003-12-01), Kim et al.
patent: 2004/0124531 (2004-07-01), Venkatraman et al.
patent: 2004/0207084 (2004-10-01), Hedrick et al.
U.S. Office Action mailed May 3, 2006, from U.S. Appl. No. 10/915,117.
Yu, et al., “Low-K SIC Copper Diffusion Barrier Films”, Novellus Systems, Inc., U.S. Appl. No. 10/869,474, filed Jun. 15, 2004, pp. 1-25.
Yu, et al., “Low-K B-Doped SIC Copper Diffusion Barrier Films”, Novellus Systems, Inc., U.S. Appl. No. 10/915,117, filed Aug. 9, 2004, pp. 1-22.
Masahiko Maeda, et al., “A Low-Permittivity Interconnection Using an SiBN Interlayer”, Sep. 1989, IEEE Transactions on Electron Devices, vol. 36, No. 9.
Takashi Sugino, et al., “Synthesis of boron nitride film with low dielectric constant for its application to silicon ultralarge scale integrated semiconductors”, 2001 Elsevier Science B.V., Diamond and Related Materials 1275-1379.

Affiliated with

Also associated with

Rating

Film for copper diffusion barrier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film for copper diffusion barrier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film for copper diffusion barrier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3826349