Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2003-08-21
2004-08-17
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S640000, C438S455000, C438S612000, C438S107000, C438S123000, C257S704000, C257S417000, C257S457000, C257S678000
Reexamination Certificate
active
06777263
ABSTRACT:
FIELD OF INVENTION
This invention relates to a wafer-level hermetic package for a micro device.
DESCRIPTION OF RELATED ART
A micro-size cap (“microcap”) wafer-level package is formed by bonding a cap wafer to a device wafer. The bonding areas are seal rings formed around each die and vias for receiving via contacts or plugs. Due to leaks from defects or contamination in the bonding areas, a packaged device may fail quality and reliability tests where it is exposed to high temperature and humidity. Thus, what is needed is a method to enhance the seal to increase the final product yield.
SUMMARY
In one embodiment of the invention, a method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to remove the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.
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US patent application Publication No. US 2003/0116825 A1, Publication Date: Jun. 26, 2003.
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Patent application Ser. No. 10/277,479, filed Oct. 22, 2002, entitled: “Method For Sealing A Semiconductor Device And Apparatus Embodying The Method”, Inventor: Frank S. Geefay, 15 pages.
Patent application Ser. No. 10/286,729, filed Nov. 1, 2002, entitled: “Die Singulation Using Deep Silicon Etching”, Inventors: Richard C. Ruby et al. , 20 pages.
Barfknecht Andrew T.
Gan Qing
Geefay Frank S.
Ruby Richard C.
Agilent Technologie,s Inc.
Yevsikov Victor V
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