Film deposition system and method of fabricating...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S715000

Reexamination Certificate

active

06914011

ABSTRACT:
A film deposition system comprises a chamber having an internal space, a support part provided in the internal space of the chamber for supporting a substrate, a gas supply part supplying gas to the internal space and a heating part heating the substrate. After an oxide film is formed on the substrate, the gas supply part supplies oxygen or a gas mixture of oxygen and ozone to the internal space while the heating part heats the substrate. Thus provided is a film deposition system capable of flattening an oxide film.

REFERENCES:
patent: 6130118 (2000-10-01), Yamazaki
patent: 6152071 (2000-11-01), Akiyama et al.
patent: 6200911 (2001-03-01), Narwankar et al.
patent: 6403479 (2002-06-01), Watanabe et al.
patent: 6579811 (2003-06-01), Narwankar et al.
patent: 6656838 (2003-12-01), Watanabe et al.
patent: 6833322 (2004-12-01), Anderson et al.
patent: 62-44574 (1987-02-01), None
patent: 8-213379 (1996-08-01), None
patent: 9-275077 (1997-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Film deposition system and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film deposition system and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film deposition system and method of fabricating... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3431593

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.