Film deposition on a semiconductor wafer

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C438S778000, C438S762000, C438S788000

Reexamination Certificate

active

06881681

ABSTRACT:
Heating a reaction chamber or other apparatus in the absence of product wafers to a “curing” temperature above a deposition temperature between the deposition of a film on a first set of semiconductor product wafers and the deposition of a film on a second set of semiconductor product wafers. In some embodiments, a boat with filler wafers is in the reaction chamber when the reaction chamber is heated to the curing temperature. In some examples, the films are deposited by a low pressure chemical vapor deposition (LPCVD) process. With some processes, if the deposition of a film on product wafers is at a temperature below a certain temperature, the film deposited with the product wafer on a boat, filler wafers, and/or other structures in the reaction chamber can cause contamination of product wafers subsequently deposited with a film in the presence of the boat and filler wafers. Contamination from these previously deposited films is inhibited by applying a curing temperature to the deposited fillers in the absence of the product wafers before a film is deposited on the next set of product wafers.

REFERENCES:
patent: 6136678 (2000-10-01), Adetutu et al.
patent: 6376806 (2002-04-01), Yoo
patent: 20020001788 (2002-01-01), Sakamoto et al.
patent: 20020006677 (2002-01-01), Egermeier et al.
patent: 20020022357 (2002-02-01), Iijima et al.
patent: 20030077920 (2003-04-01), Noda et al.
Blessing, J. et al., “Opposing Photoresist in PVD,”European Semiconductor, 2002, pp. 33-34, vol. 24.
Proost, J. et al., “Critical Role of Degassing of Hot Aluminum Filling,”Journal of Vacuum Sci. and Tech B., 1998, pp. 2091-2098, vol. 16, No. 4.

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