Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-04-19
2005-04-19
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S778000, C438S762000, C438S788000
Reexamination Certificate
active
06881681
ABSTRACT:
Heating a reaction chamber or other apparatus in the absence of product wafers to a “curing” temperature above a deposition temperature between the deposition of a film on a first set of semiconductor product wafers and the deposition of a film on a second set of semiconductor product wafers. In some embodiments, a boat with filler wafers is in the reaction chamber when the reaction chamber is heated to the curing temperature. In some examples, the films are deposited by a low pressure chemical vapor deposition (LPCVD) process. With some processes, if the deposition of a film on product wafers is at a temperature below a certain temperature, the film deposited with the product wafer on a boat, filler wafers, and/or other structures in the reaction chamber can cause contamination of product wafers subsequently deposited with a film in the presence of the boat and filler wafers. Contamination from these previously deposited films is inhibited by applying a curing temperature to the deposited fillers in the absence of the product wafers before a film is deposited on the next set of product wafers.
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Adetutu Olubunmi O.
Phillips Anna M.
Rossow Marc
Clingan, Jr. James L.
Dolezal David G.
Freescale Semiconductor Inc.
Lee Hsien-Ming
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