Film deposition method and film deposition apparatus of...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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C427S248100, C427S250000

Reexamination Certificate

active

08029873

ABSTRACT:
The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

REFERENCES:
patent: 5968327 (1999-10-01), Kobayashi et al.
patent: 6949461 (2005-09-01), Malhotra et al.
patent: 2003/0075752 (2003-04-01), Motoyama
patent: 10-289887 (1998-10-01), None
patent: 2000-077365 (2000-03-01), None
patent: 2003-124313 (2003-04-01), None
patent: 2003124313 (2003-04-01), None
patent: 2004-153162 (2004-05-01), None
patent: 2004153162 (2004-05-01), None
patent: 2004/053926 (2004-06-01), None
PCT Notification of Transmittal of Translation of the International Preliminary Examination Report (Form PCT/IB/338) dated Jan. 2004.
PCT International Preliminary Report on Patentability (Form PCT/IPEA/409) dated Apr. 2005.

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