Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2006-06-28
2011-10-04
Gambetta, Kelly M. (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S248100, C427S250000
Reexamination Certificate
active
08029873
ABSTRACT:
The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.
REFERENCES:
patent: 5968327 (1999-10-01), Kobayashi et al.
patent: 6949461 (2005-09-01), Malhotra et al.
patent: 2003/0075752 (2003-04-01), Motoyama
patent: 10-289887 (1998-10-01), None
patent: 2000-077365 (2000-03-01), None
patent: 2003-124313 (2003-04-01), None
patent: 2003124313 (2003-04-01), None
patent: 2004-153162 (2004-05-01), None
patent: 2004153162 (2004-05-01), None
patent: 2004/053926 (2004-06-01), None
PCT Notification of Transmittal of Translation of the International Preliminary Examination Report (Form PCT/IB/338) dated Jan. 2004.
PCT International Preliminary Report on Patentability (Form PCT/IPEA/409) dated Apr. 2005.
Hatano Tatsuo
Ikeda Taro
Mizusawa Yasushi
Sakuma Takashi
Yokoyama Osamu
Gambetta Kelly M.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
LandOfFree
Film deposition method and film deposition apparatus of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Film deposition method and film deposition apparatus of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film deposition method and film deposition apparatus of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4266451