Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-19
2007-06-19
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23011
Reexamination Certificate
active
10943634
ABSTRACT:
Suitable particles may be deposited within an extremely small high-aspect ratio via by flowing the particles in a suspension using supercritical carbon dioxide. The particles may be made up of diblock copolymers or silesquioxane-based materials or oligomers of phobic homopolymers or pre-formed silica-based particles stabilized using diblock copolymers and may include chemical initiators to permit in situ polymerization within the via.
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Ramachandrarao Vijayakumar S.
Turkot, Jr. Robert B.
Intel Corporation
Pert Evan
Sandvik Benjamin P.
Trop Pruner & Hu P.C.
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