Filling of vias and contacts employing an aluminum-germanium all

Details Filling of vias and contacts employing an aluminum-germanium all Filling of vias and contacts employing an aluminum-germanium all

1993-02-17

1994-10-25

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20412912, 20419217, 437189, 437194, C23C 1434

Patent

active

053586166

ABSTRACT:
A multi-step method of filling submicron vias with aluminum includes an initial deposition of about 1000 angstroms of aluminum which is sputter deposited at a temperature of about 150.degree. C. Subsequently, a layer of an aluminum germanium alloy is deposited, again about 1000 angstroms at 150.degree. C. or less. A third layer of aluminum without germanium is deposited at a temperature of about 150.degree. C. Approximately 1000 angstroms is deposited. This is followed by a final aluminum deposition which is conducted at 450.degree. to 500.degree. C. to deposit 5000 to 15,000 angstroms of aluminum in total. The two depositions of aluminum, at the relatively low temperature of 150.degree. C., prevents the germanium from precipitating and also permits the germanium to diffuse into these layers which increases the overall melting temperature of the deposited metal so that at subsequent higher treatment temperatures, the metal does not dewet the via surface.

REFERENCES:
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patent: 4824544 (1989-04-01), Mikalesen et al.
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patent: 5171412 (1992-12-01), Talieh et al.
Sugano et al 1992 VMIC Conference Proceedings "Quarter Micron Hole Filling With SiN Sidewalls by Aluminum . . . ".
Kikuta et al 1991 VMIC Conference Proceedings "Al-Ge Reflow Sputtering For Submicron-Contact-Hole Filling".

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