Filling narrow and high aspect ratio openings with...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S639000

Reexamination Certificate

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07622382

ABSTRACT:
Methods of fabricating an interconnect utilizing an electroless deposition technique, which fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, and electrolessly depositing a conductive material within the opening. A dual-function barrier layer is formed within the opening. The dual-function barrier layer is capable of acting as a diffusion barrier layer and a nucleation surface for a conductive material. An electrolessly deposited conductive material is formed immediately above the dual-function barrier layer. An ultra-thin seed layer may be formed immediately on top of the barrier layer prior to the electrolessly deposited conductive material being formed thereon.

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Wang, Zenglin “Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100nm Cu Interconnections” Jpn. J. Appl. Phys. vol. 42 (2003) pp. L1223-1225.

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