Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-24
2007-07-24
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S679000, C438S687000, C438S637000
Reexamination Certificate
active
11085971
ABSTRACT:
One embodiment of the invention is a method for void-free filling with a metal or an alloy inside openings by electrochemical deposition (ECD), said method including steps of: (a) providing a substrate with at least one opening and a field surrounding the at least one opening, said at least one opening having a bottom and sidewalls surfaces, said substrate including an electrically conductive surface, said conductive surface including at least the bottom surface of the at least one opening; (b) immersing the substrate in an electrolyte contained in an electrochemical deposition (ECD) cell, the ECD cell including at least one anode and a cathode, wherein the cathode including at least a portion of the conductive surface of the substrate, and wherein the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and at least one inhibitor additive having concentrations; (c) providing agitation of the electrolyte across the surface of the substrate immersed in the electrolyte, wherein the agitation of the electrolyte includes moving one or more wiping blades, or one or more wiping pads, or one or more wiping brushes, relative to the substrate and/or moving the substrate relative to one or more wiping brushes, or relative to one or more wiping pads, or relative to one or more wiping blades, said agitation having a strength; and (d) applying electrical current between the at least one anode and the cathode to generate an average electroplating current density of at least 20 mA/cm2, wherein the strength of the agitation and the concentration of the metallic ions are adequate to produce void-free filling of the at least one opening.
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