Filling high aspect ratio isolation structures with...

Details Filling high aspect ratio isolation structures with... Filling high aspect ratio isolation structures with...

2005-03-22

2005-03-22

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000

Reexamination Certificate

active

06869860

ABSTRACT:
Isolation trenches and capacitor trenches containing vertical FETs (or any prior levels p-n junctions or dissimilar material interfaces) having an aspect ratio up to 60 are filled with a process comprising: applying a spin-on material based on silazane and having a low molecular weight; pre-baking the applied material in an oxygen ambient at a temperature below about 450 deg C.; converting the stress in the material by heating at an intermediate temperature between 450 deg C. and 800 deg C. in an H2O ambient; and heating again at an elevated temperature in an O2 ambient, resulting in a material that is stable up to 1000 deg C., has a compressive stress that may be tuned by variation of the process parameters, has an etch rate comparable to oxide dielectric formed by HDP techniques, and is durable enough to withstand CMP polishing.

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