Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-29
2009-02-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S184000, C438S238000, C438S678000, C257SE23166
Reexamination Certificate
active
07485561
ABSTRACT:
A method of filling a conductive material in a three dimensional integration structure feature formed on a surface of a wafer is disclosed. The feature is filled with a dispersion containing a plurality of conductive particles and a solvent. Then, the solvent is removed from the feature, leaving the plurality of conductive particles in the feature. These two steps are repeated until the feature is filled up with the conductive particles. Then, the conductive particles are annealed in the feature, thereby forming a dense conductive plug in the feature.
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ASM NuTool, Inc.
Fourson George
Knobbe Martens Olson & Bear LLP
Parker John M
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