Filling deep features with conductors in semiconductor...

Details Filling deep features with conductors in semiconductor... Filling deep features with conductors in semiconductor...

2007-04-30

2009-12-01

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S184000, C438S238000, C438S678000, C257SE23166

Reexamination Certificate

active

07625814

ABSTRACT:
A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.

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Reid et al., “Factors influencing damascene feature fill using copper PVD and electroplating.”Solid State Technology, Jul. 2000, pp. 86-103.

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