Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-02-12
2000-10-10
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438626, 438675, 438760, 438688, H01L 2144
Patent
active
061301582
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: preparing a substrate having an insulating layer with a connection hole; forming a wiring layer covering the connection hole; and heating the substrate to a temperature equal to or higher than a temperature of fluidizing the wiring layer material and rotating the substrate in a direction of generating centrifugal force directing from an opening of the connection hole toward the bottom of the connection hole. The centrifugal force facilitates reflow of the wiring layer so that the inside of the connection hole can be more preferably filled and the surface of the wiring layer can be planarized.
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Berry Renee R.
Nelms David
Yamaha Corporation
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