Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2010-11-30
2011-11-15
Coleman, William D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C525S940000, C428S845000, C438S780000, C257SE29015
Reexamination Certificate
active
08058711
ABSTRACT:
A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3:The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.
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Takahiro Gunji et al., “Preparation of Polysiloxazanes and Thier Transformation to Silcon Oxynitride”, 2006, Journal of Ceramic Society of Japan, vol. 114, No. 6, pp. 492-496.
Bae Jin-Hee
Han Dong-Il
Kim Jong-Seob
Kim Sang-Kyun
Kwak Taek-Soo
Cheil Industries Inc.
Coleman William D
Lee & Morse P.C.
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