Fill and etchback process using dual photoresist sacrificial lay

Details Fill and etchback process using dual photoresist sacrificial lay Fill and etchback process using dual photoresist sacrificial lay

1993-09-08

1996-05-14

Wright, Lee C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

437 67, 437 72, 1566431, 1566481, 1566491, 1566551, 1566571, 15665911, 1566621, G03F 726

Patent

active

055166253

ABSTRACT:
To planarize an oxide-filled shallow trench-isolated semiconductor architecture, a composite photoresist sacrificial layer is initially formed on the oxide-filled structure. The composite photoresist layer contains photoresist plugs which are reflowed to fill depressions in the oxide fill layer overlying the trench, and an overlying photoresist layer which effectively planarizes the depression-filled trench oxide layer. Respective photoresist and oxide selective etching chemistries are then successively applied to first etch the composite sacrificial photoresist layer and then etch the trench fill oxide layer down to the surface of an etch stop polysilicon layer. Since the thickness of the polysilicon etch stop layer is initially formed so as to extend above the mesa layer of the trench-isolated semiconductor structure by a relatively nominal height, after planarization, the top surface of the trench fill oxide layer still extends above the surface of the mesa to prevent shorting of a subsequently formed polysilicon gate layer with underlying mesa material, while being sufficiently low enough to avoid sidewall stringer formation.

REFERENCES:
patent: 4307179 (1981-12-01), Chang et al.
patent: 4464459 (1984-08-01), Majima et al.
patent: 4811079 (1989-03-01), Turina et al.
IBM Tecnical Disclosure Bulletin vol. 27, No. 2, Jul. 1984 Double Planar Polyimide Process, Kent.

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