Filamentary silicon carbide crystals by VLS growth in molten iro

Details Filamentary silicon carbide crystals by VLS growth in molten iro Filamentary silicon carbide crystals by VLS growth in molten iro

1975-07-25

1977-03-22

Yodkoff, Norman

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156606, 156614, 156624, 264165, 423346, 423439, 427249, 427 82, B01J 1726, B01J 1732, C01B 3136

Patent

active

040135039

ABSTRACT:
A method of growing silicon carbide whiskers from a gaseous phase by means of a vapor-liquid-solid mechanism on a substrate using iron in a finely divided state as a solvent for the silicon carbide.

REFERENCES:
patent: 3053635 (1962-09-01), Shockley
patent: 3346414 (1967-10-01), Elles et al.
patent: 3493431 (1970-02-01), Wagner
patent: 3546032 (1970-12-01), Basart
patent: 3721732 (1973-03-01), Knippenberg et al.
Patrick et al., "Physical Review", vol. 143, pp. 526-536 (3/1966).

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