Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-01-11
1995-12-26
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257390, 257400, 257499, 36518501, H01L 2968, H01L 2934
Patent
active
054790360
ABSTRACT:
A device and method of manufacturing the device comprising a self-aligned, split-gate EPROM/Flash EPROM array device. Ions are implanted into locations in a doped well in a substrate to form buried bit lines, a forming a thick dielectric over the implanted ions, implanting a first threshold voltage V.sub.T1 dopant into the doped well, formation of a first polysilicon layer on the silicon dioxide layer, forming an inter polysilicon layer on the surface of the first polysilicon layer on the device, patterning that layer by forming a mask with openings and etching through the openings in the mask, forming a second polysilicon layer on the inter polysilicon layer, forming a mask and etching portions of the second polysilicon layer to form word lines therein, and etching portions of the first polysilicon layer and the inter polysilicon dielectric to form a stacked gate beneath the word lines with a trough etched down into the well in the space defined within the buried bit lines and the second polysilicon layer, and implanting an isolation implant into the trough, whereby preliminary manufacture of the device is completed.
REFERENCES:
patent: 5045489 (1991-09-01), Gill et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5192872 (1993-03-01), Lee
patent: 5236853 (1993-08-01), Hsue
patent: 5274588 (1993-12-01), Manzur et al.
Jones II Graham S.
Monin, Jr. Donald L.
Saile George O.
United Microelectronics Corporation
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