Field transistors for electrostatic discharge protection and...

Details Field transistors for electrostatic discharge protection and... Field transistors for electrostatic discharge protection and...

2011-08-30

2011-08-30

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257SE27060

Reexamination Certificate

active

08008725

ABSTRACT:
A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate insulating layer having a high possibility of insulation breakdown is not used. To form an inversion layer for providing a current path between source and drain regions, a field oxide layer is interposed to form low concentration source and drain regions overlapped by the gate conductive layer pattern.

REFERENCES:
patent: 3789503 (1974-02-01), Nishida et al.
patent: 5623154 (1997-04-01), Murakami et al.
patent: 6359318 (2002-03-01), Yamamoto et al.
patent: 6841821 (2005-01-01), Hsu
patent: 4068575 (1992-03-01), None

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