Field shield isolated EPROM

Details Field shield isolated EPROM Field shield isolated EPROM

1994-04-28

1996-04-23

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257394, 257630, H01L 27115

Patent

active

055106382

ABSTRACT:
A transistor structure (10), memory array (150) using the transistor structure, and method for making it are presented. The memory array (150), on a semiconductor substrate (152), contains a plurality of substantially parallel bit lines (154,155). A plurality of channel regions in the substrate (152) are bounded in one direction by a sets of bit line pairs (154,155). A conductive field shield layer (160), over a first insulation layer (156), is patterned to provide electrical regions over the channel regions between the first alternate sets of the bit lines (154,155) to form isolation transistor structures when biased with respect to the substrate (152). The field shield layer (160) is patterned to expose the channel regions of the memory transistors (151, . . . , 151'") between second alternate sets of the bit lines (155,154). A second insulating layer (163) is formed over the field shield layer (160). A nonvolatile memory dielectric layer (165) is formed over the channel regions between the second alternate sets of the bit lines (155,154). A conductive gate layer (166), patterned to provide a plurality of stripes, extends across the channel regions of the second alternate sets of bit lines (155,154). In one embodiment, the electrical regions patterned from the conductive field shield layer are a plurality of substantially parallel stripes overlying the channel regions between the first alternate sets of the bit lines, and may additionally overlie at least a portion of the bit lines of the first alternate sets of the bit lines. The plurality of stripes of the conductive gate layer are preferably substantially orthogonal to the parallel field shield stripes. In another embodiment, the field shield layer is substantially self aligned with the channel regions of the second alternate sets of bit lines in a direction orthogonal to the direction of current flow in the channels of the memory transistors (151, . . . ,151'").

REFERENCES:
patent: 3811076 (1974-05-01), Smith
patent: 3846768 (1974-11-01), Krick
patent: 5111257 (1992-05-01), Andoh et al.

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