Field ramp down for pinned synthetic antiferromagnet

Details Field ramp down for pinned synthetic antiferromagnet Field ramp down for pinned synthetic antiferromagnet

2006-06-13

2006-06-13

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S158000, C365S173000, C360S324110, C438S003000

Reexamination Certificate

active

07061787

ABSTRACT:
Techniques for processing magnetic devices are provided. In one aspect, a method of processing a magnetic device including two or more anti-parallel coupled layers comprises the following steps. A magnetic field is applied in a given direction to orient a direction of magnetization of the two or more anti-parallel coupled layers. The direction of the applied magnetic field is rotated in relation to a positioning of the two or more anti-parallel coupled layers to counteract at least a portion of a change in a direction of magnetization experienced by at least one of the two or more anti-parallel coupled layers when the applied magnetic field is reduced.

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patent: 2005/0164414 (2005-07-01), Deak
Beach et al., “AP-pinned spin valve GMR and magnetization,” Journal of Applied Physics, vol. 87, No. 9, (2000).

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