Electronic digital logic circuitry – Multifunctional or programmable – Having details of setting or programming of interconnections...
Reexamination Certificate
2006-11-14
2006-11-14
Tan, Vibol (Department: 2819)
Electronic digital logic circuitry
Multifunctional or programmable
Having details of setting or programming of interconnections...
C326S039000, C365S226000, C365S227000, C365S185040, C365S185080, C365S185330
Reexamination Certificate
active
07135886
ABSTRACT:
The embodiments of the present invention relate to the general area of Field Programmable Gate Arrays and, in particular, to Field Programmable Gate Arrays (“FPGAs”) comprising memory cells with both volatile and nonvolatile properties, and the control and management of each portion to overcome the disadvantages of each individual technology. Some of the advantages of combining the two properties in a single FPGA are power reduction, shorter power-on time, configuration flexibility, instant-on logic capability, cost savings in system components including nonvolatile instant-on devices, configuration memories, and standard CMOS process. Furthermore, to optimize these and other advantages of the proposed architecture, additional apparatus and methods are presented to individually and collectively manage and control different parts of such hybrid FPGAs.
REFERENCES:
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 4322822 (1982-03-01), McPherson
patent: 4488262 (1984-12-01), Basire et al.
patent: 4490900 (1985-01-01), Chiu
patent: 4502208 (1985-03-01), McPherson
patent: 4507757 (1985-03-01), McElroy
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4546273 (1985-10-01), Osman
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4613886 (1986-09-01), Chwang
patent: 4677742 (1987-07-01), Johnson
patent: 4758745 (1988-07-01), El Gamal et al.
patent: 4758986 (1988-07-01), Kuo
patent: 4794562 (1988-12-01), Kato et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4870302 (1989-09-01), Freeman
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 4962342 (1990-10-01), Mead et al.
patent: 5138410 (1992-08-01), Takebuchi
patent: 5150179 (1992-09-01), Gill
patent: 5303185 (1994-04-01), Hazani
patent: 5304871 (1994-04-01), Dharmarajan et al.
patent: 5323342 (1994-06-01), Wada et al.
patent: 5412244 (1995-05-01), Hamdy et al.
patent: 5455525 (1995-10-01), Ho et al.
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5496756 (1996-03-01), Sharma et al.
patent: 5576568 (1996-11-01), Kowshik
patent: 5578848 (1996-11-01), Kwong et al.
patent: 5586270 (1996-12-01), Rotier et al.
patent: 5587603 (1996-12-01), Kowshik
patent: 5600265 (1997-02-01), El Gamal et al.
patent: 5650336 (1997-07-01), Eriguchi et al.
patent: 5675541 (1997-10-01), Leterrier
patent: 5675547 (1997-10-01), Koga
patent: 5745417 (1998-04-01), Kobayashi et al.
patent: 5781032 (1998-07-01), Bertolet et al.
patent: 5784636 (1998-07-01), Rupp
patent: 5825200 (1998-10-01), Kolze
patent: 5825201 (1998-10-01), Kolze
patent: 5880512 (1999-03-01), Gordon et al.
patent: 5889411 (1999-03-01), Chaudhary
patent: 5892962 (1999-04-01), Cloutier
patent: 5909049 (1999-06-01), McCollum
patent: 5929482 (1999-07-01), Kawakami
patent: 5949712 (1999-09-01), Rao et al.
patent: 5986931 (1999-11-01), Caywood
patent: 5986939 (1999-11-01), Yamada
patent: 6016268 (2000-01-01), Worley
patent: 6031761 (2000-02-01), Ghilardelli et al.
patent: 6034893 (2000-03-01), Mehta
patent: 6040968 (2000-03-01), Duvvury et al.
patent: 6044012 (2000-03-01), Rao et al.
patent: 6047243 (2000-04-01), Bang
patent: 6055205 (2000-04-01), Rao et al.
patent: 6064225 (2000-05-01), Andrews et al.
patent: 6064595 (2000-05-01), Logie et al.
patent: 6077719 (2000-06-01), Koike
patent: 6084428 (2000-07-01), Kolze et al.
patent: 6097077 (2000-08-01), Gordon et al.
patent: 6153463 (2000-11-01), Wei et al.
patent: 6157568 (2000-12-01), Schmidt
patent: 6166954 (2000-12-01), Chern
patent: 6177830 (2001-01-01), Rao
patent: 6198652 (2001-03-01), Kawakubo
patent: 6214666 (2001-04-01), Mehta
patent: 6215140 (2001-04-01), Reisinger et al.
patent: 6215689 (2001-04-01), Chhor et al.
patent: 6218274 (2001-04-01), Komatsu
patent: 6232631 (2001-05-01), Schmidt et al.
patent: 6236229 (2001-05-01), Or-Bach
patent: 6249809 (2001-06-01), Bro
patent: 6282123 (2001-08-01), Mehta
patent: 6294809 (2001-09-01), Logie
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6304666 (2001-10-01), Warren et al.
patent: 6337250 (2002-01-01), Furuhata
patent: 6351428 (2002-02-01), Forbes
patent: 6421293 (2002-07-01), Candelier et al.
patent: 6431456 (2002-08-01), Nishizawa et al.
patent: 6445619 (2002-09-01), Mihnea et al.
patent: 6456535 (2002-09-01), Forbes et al.
patent: 6459634 (2002-10-01), Sher
patent: 6476636 (2002-11-01), Lien et al.
patent: 6515509 (2003-02-01), Baxter
patent: 6556481 (2003-04-01), Hsu et al.
patent: 6594192 (2003-07-01), McClure
patent: 6602729 (2003-08-01), Lin
patent: 6633182 (2003-10-01), Pileggi et al.
patent: 6650143 (2003-11-01), Peng
patent: 6674670 (2004-01-01), Jeung
patent: 6678646 (2004-01-01), McConnell et al.
patent: 6700151 (2004-03-01), Peng
patent: 6753590 (2004-06-01), Fifield et al.
patent: 6754881 (2004-06-01), Kuhlmann et al.
patent: 6777757 (2004-08-01), Peng et al.
patent: 6862205 (2005-03-01), Agata et al.
patent: 2001/0003374 (2001-06-01), Bohmer et al.
patent: 2003/0218920 (2003-11-01), Harari
patent: 2005/0062497 (2005-03-01), Pellizzer et al.
patent: 0 295 935 (1988-12-01), None
patent: 61292295 (1986-12-01), None
U.S. Appl. No. 09/629,570, Bourassa et al.
Wu, E.W. et al; Voltage-Dependent Voltage-Acceleration of Oxide Breakdown for Ultra-Thin Oxides; IEEE, 2000, pp. 1-4, no month.
Sune, Jordi et al; Post Soft Breakdown Conduction in SiO2 Gate Oxides; IEEE, 2000, pp. 1-4, no month.
DeGraaf, C., et al, A Novel High-Density Low-Cost Diode Programmable Read Only Memory, IEEE, 1996, pp. 7.6.1-7.6.4, no month.
Rasras, Mahmoud et al; Substrate Hole Current Origin After Oxide Breakdown; IEEE, 2000, pp. 1-4, no month.
Lombardo, S. et al; Softening of Breakdown in Ultra-Thin Gate Oxide nMOSFET's at Low Inversion Layer Density; 39th Annual International Reliability Physics Symposium; Orlando, FL 2001, pp. 163-169, no month.
Miranda, Enrique et al; Analytic Modeling of Leakage Current Through Multiple Breakdown Paths in SiO2 Films; 39th Annual International Reliability Physics Symposium; Orlando, FL 2001, pp. 369-379, no month.
KLP International Ltd.
Tan Vibol
LandOfFree
Field programmable gate arrays using both volatile and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field programmable gate arrays using both volatile and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field programmable gate arrays using both volatile and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3664159