Field plate trench transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257SE29040, C438S270000

Reexamination Certificate

active

07605427

ABSTRACT:
A field plate trench transistor has a semiconductor body which contains a plurality of trenches which are isolated from one another by mesa regions. The trenches contain gate electrodes for controlling a vertical flow of current through the semiconductor body. At least one portion of the gate electrodes are at source potential.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 5298781 (1994-03-01), Cogan et al.
patent: 5864159 (1999-01-01), Takahashi
patent: 6515348 (2003-02-01), Hueting et al.
patent: 2002/0030237 (2002-03-01), Omura et al.
patent: 2002/0185705 (2002-12-01), Saitoh et al.
patent: 2005/0173758 (2005-08-01), Peake et al.
patent: 1 168 455 (2002-01-01), None
patent: 2003243655 (2003-08-01), None

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