Field plate transistor with reduced field plate resistance

Details Field plate transistor with reduced field plate resistance Field plate transistor with reduced field plate resistance

2007-08-07

2007-08-07

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S340000, C257S488000, C257S486000, C257S339000, C257S146000, C257S508000, C257S509000, C438S140000, C438S454000

Reexamination Certificate

active

10209746

ABSTRACT:
In one example embodiment, a transistor (100) is provided. The transistor (100) comprises a source (10), a gate (30), a drain (20), and a field plate (40) located between the gate (30) and the drain (20). The field plate (40) comprises a plurality of connection locations (47) and a plurality of electrical connectors (45) connecting said plurality of connection locations (47) to a potential.

REFERENCES:
patent: 5119149 (1992-06-01), Weitzel et al.
patent: 5252848 (1993-10-01), Adler et al.
patent: 5898198 (1999-04-01), Herbert et al.
patent: 5918137 (1999-06-01), Ng et al.
patent: 6001710 (1999-12-01), Francois et al.
patent: 6091110 (2000-07-01), Hebert et al.
patent: 6172400 (2001-01-01), Ng et al.

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