Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Implanting to form insulator
Patent
1995-11-02
1999-04-20
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Implanting to form insulator
438766, 438440, 438966, 438528, H01L 2176
Patent
active
058952527
ABSTRACT:
A method of forming a field oxide isolation region is described, in which a masking layer is formed over a silicon substrate. The masking layer is patterned to form an opening for the field oxide isolation region, whereby the remainder of the masking layer forms an implant mask. A conductivity-imparting dopant is implanted through the opening into the silicon substrate. Oxygen is implanted through the opening into the silicon substrate in multiple implantation steps. The implant mask is removed. The field oxide isolation region is formed in and on the silicon substrate, by annealing in a non-oxygen ambient. Alternately, the field oxide isolation region is formed by annealing in oxygen, simultaneously forming a gate oxide in the region between the field oxide isolation regions.
REFERENCES:
patent: 3666548 (1972-05-01), Brack et al.
patent: 3840409 (1974-10-01), Ashar
patent: 4676841 (1987-06-01), Celler
patent: 4885618 (1989-12-01), Schubert et al.
patent: 4912062 (1990-03-01), Verma
patent: 4975126 (1990-12-01), Margail et al.
patent: 5082793 (1992-01-01), Li
Wolf, S., et al, "Silicon Processing for the VLSI Era: vol.1, Process Technology", Lattice Press, p.327, 1986.
Wolf, S., et al, Silicon Processing for the VLSI Era, vol. 1; Process Technology, Lattice Press, 1986, pp. 307-308, 321, 529-531.
"Selectively Implanted Oxygen Isolation Technology (S10)", P. Ratman et al, Electronics Letters, May 9, 1985, vol. 21 No. 10 pp. 442-443.
Huang Cheng Han
Lur Water
Fourson George
United Microelectronics Corporation
LandOfFree
Field oxidation by implanted oxygen (FIMOX) does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field oxidation by implanted oxygen (FIMOX), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field oxidation by implanted oxygen (FIMOX) will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2244166