Field of the invention

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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Details

257329, 257330, 257342, H01L 310312

Patent

active

057738491

ABSTRACT:
A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extends through the base layer. In the trench an n-type channel region extends vertically along a wall of the trench and connects a source region layer to the drift layer. A gate electrode is arranged in the trench to be on the opposite side of the channel region with respect to the base layer.

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patent: 5489787 (1996-02-01), Amaratunga et al.
patent: 5614749 (1997-03-01), Ueno

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