Field implant for silicon controlled rectifier

Details Field implant for silicon controlled rectifier Field implant for silicon controlled rectifier

1996-04-01

1999-04-13

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257362, H01L 2362

Patent

active

058941533

ABSTRACT:
An integrated circuit formed on a semiconductor substrate has a contact pad for communicating signals between an external device and an internal signal line. The pad is protected by an SCR that conducts electrostatic discharge pulses from the pad directly to a current sink. The SCR includes a subregion underneath a field oxide that has a field inplant that increases the dopant concentration. The field implant lowers the SCR trigger voltage, so that SCR triggers before an ESD pulse can cause latch-up or damage in other devices in the integrated circuit.

REFERENCES:
patent: 5077591 (1991-12-01), Chen et al.
patent: 5225702 (1993-07-01), Chatterjee
patent: 5274262 (1993-12-01), Avery
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5473169 (1995-12-01), Ker et al.
patent: 5493133 (1996-02-01), Duvvury et al.
patent: 5506742 (1996-04-01), Marum

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