Field implant for semiconductor device

Details Field implant for semiconductor device Field implant for semiconductor device

1995-07-11

1997-02-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257376, 257396, 257398, 257399, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056043708

ABSTRACT:
The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.

REFERENCES:
patent: 3936858 (1976-02-01), Seeds et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 5151381 (1992-09-01), Liu et al.
Wolf, Silicon Processing for the VLSI Era--vol. II "Process Integration," Lattice Press, 1990, pp. 22-23, Sections 2.2.2.4 and 2.2.2.5.

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