Electric lamp and discharge devices: systems – Plural power supplies – Plural cathode and/or anode load device
Patent
1992-05-13
1994-07-12
Argenbright, Tony M.
Electric lamp and discharge devices: systems
Plural power supplies
Plural cathode and/or anode load device
313309, 445 24, 445 50, H01J 130
Patent
active
053292073
ABSTRACT:
A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3875442 (1975-04-01), Wasa et al.
patent: 4196041 (1980-04-01), Baghdadi et al.
patent: 4923421 (1990-05-01), Brodie et al.
patent: 4943343 (1990-07-01), Bardai et al.
patent: 4997780 (1991-03-01), Szluk et al.
patent: 5064396 (1991-11-01), Spindt et al.
patent: 5083958 (1992-01-01), Longo et al.
patent: 5186670 (1993-02-01), Doan et al.
patent: 5205770 (1993-04-01), Lowrey et al.
patent: 5217401 (1993-06-01), Watanabe et al.
patent: 5229331 (1993-07-01), Doan et al.
patent: 5232549 (1993-08-01), Cathey et al.
S. D. Brotherton, "Poly-crystalline Silicon Thin Film Devices for Large Area Electronics", Microelectronic Engineering 15, 1991, pp. 333-340.
Madeleine Bonnel, Nichole Duhamel, Mohamed Guendouz, Lazhar Hiji, Bertand Loisel and Patrick Rualt, " Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon Films", Japanese Journal of Applied Physics, Nov., 1991, pp. L1924-L1926.
Satoshi Takenake, Masafumi Kunii, Hideali Oka and Hajime Kurihara, "High Mobility Poly-Si TFTs Using Solid Phase Crystallized a Si Films Deposited by Plasma Enhanced Chemical Vapor Deposition", Extended Abstracts of the 22nd 1990 Internation Conference on Solid State Device and Materials, Sendai.
Hiroshi Kanoh, Osamu Sugiura, Paul A. Breddels and Masakiyo Matsumura, "Optimization of Chemical Vapor Deposition Conditons of Amorphous-Silicon Films for Thin-Film Transistor Application", Japanese Journal of Applied Physics, Nov., 1990, pp. 2358-2364.
Thomas W. Little, Ken-ichi Takahara, Hideki Koike, Takashi Nakazawa, Ichio Yudasaka and Hiroyuki Ohshima, "Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator", Japanese Journal, Dec. 1991.
S. D. Brotherton, J. R. Ayres and N. D. Young, "Characterisation of Low Temp. Poly-Si Thin Film Transistors", Solid-State Electronics, 1991, pp. 671-697.
Fei Luo, Gerold W. Neudeck and Shengwen Luan, "Simulation of the Turn-On Transient Behavior of Amorphous-Silicon Thin-Film Transistors", Solid-State Electronics, 1991, pp. 1289-1295.
Uday Mitra, Barbara Rossi, and Babar Khan, "Mechanism of Plasma Hydrogenation of Polysilicon Thin Film Transistors", pp. 3420-3424 J. Electrochem. Soc., Nov. 1991.
Cathey David A.
Doan Trung T.
Lowrey Tyler A.
Rolfson J. Brett
Argenbright Tony M.
Micro)n Technology, Inc.
Pappas Lia M.
LandOfFree
Field emission structures produced on macro-grain polysilicon su does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field emission structures produced on macro-grain polysilicon su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field emission structures produced on macro-grain polysilicon su will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-399179