Field emission structure and method of forming same

Details Field emission structure and method of forming same Field emission structure and method of forming same

1992-07-02

1993-12-14

Dees, Carl F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156656, 156657, 1566591, 156662, B44C 122, C03C 1500, H01L 21306

Patent

active

052698777

ABSTRACT:
A process for making a tip microstructure in amorphous silicon or polysilicon. A layer of nitride is first deposited on the amorphous silicon or polysilicon. Then the amorphous silicon or polysilicon is roughly patterned to form the base of the tip structure. the tip is carved out of the amorphous silicon or polysilicon by using an oxide growth process that is controlled by the amount of dopant in the amorphous silicon or polysilicon. After the tip is carved, the oxide is stripped away exposing the tip.

REFERENCES:
patent: 4878900 (1989-11-01), Dugan et al.
Yao, Arney, and MacDonald, "Fabrication of High Frequency Two-Dimensional Nanoactuators for Scanned Probe Devices", Journal of Microelectromechanical Systems, vol. 1, No. 1, Mar. 1992, pp. 14-21.
Orvis, McConaghy, Ciarlo, Yee and Hee, "Modeling and Fabricating Micro-Cavity Integrated Vacuum Tubes", IEEE Transactions On Electron Devices, vol. 36, No. 11, Nov. 1989, pp. 2651-2657.

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