Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2006-06-06
2006-06-06
Pert, Evan (Department: 2826)
Static information storage and retrieval
Systems using particular element
Amorphous
C257S003000, C438S800000
Reexamination Certificate
active
07057923
ABSTRACT:
A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) or GST layer. The cell also includes a stylus with the apex of the stylus contacting the GST layer. The apex may penetrate the GST layer
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Furkay Stephen S.
Horak David V.
Lam Chung H.
Wong Hon-Sum P.
Chung, Esq. Wan Yee
International Buisness Machines Corp.
Law Office of Charles W. Peterson, Jr.
Pert Evan
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