Field emission erasable programmable read-only memory

Details Field emission erasable programmable read-only memory Field emission erasable programmable read-only memory

1997-10-15

2000-03-14

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular connection

365103, 36518529, 257314, G11C 1604

Patent

active

06038171&

ABSTRACT:
Disclosed is a field-emission erasable programmable read-only memory cell which includes one or more field-emission tips on one or more layers of the cell. The cell is programmable and/or erasable by electron emission from the emission tips. Methods of making and using this field-emission erasable programmable read-only memory (FEEPROM) cell are also provided.

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patent: 5350937 (1994-09-01), Yamazaki et al.
patent: 5359256 (1994-10-01), Gray
Hirano et al., "A MOSFET-structured Si Tip for Stable Emission Current", 1996, IEEE.

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