Field emission displays with reduced light leakage

Details Field emission displays with reduced light leakage Field emission displays with reduced light leakage

1999-02-24

2000-10-17

Niebling, John F.

Semiconductor device manufacturing: process

Electron emitter manufacture

313309, 313310, 313311, 445 49, 445 50, 445 51, H01L 2100

Patent

active

061330566

ABSTRACT:
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

REFERENCES:
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patent: 5259799 (1993-11-01), Doan et al.
patent: 5394006 (1995-02-01), Liu
patent: 5401676 (1995-03-01), Lee
patent: 5643032 (1997-07-01), Cheng et al.
patent: 5831378 (1998-11-01), Rolfson et al.
patent: 5982081 (1999-11-01), Sin et al.

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