Field emission display

Electric lamp and discharge devices – With luminescent solid or liquid material – Vacuum-type tube

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Details

313308, 313336, 313351, 313309, H01J 130

Patent

active

061372196

ABSTRACT:
A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

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patent: 5907215 (1999-05-01), Mougin et al.
Ken Ozawa et al., MOSFET-structured Si field emitter tip; Technical Digest of IVMC'97 Kyongiu, Korea, pp 34-37; Dec. 1997.
Gen Hashiguchi et al., A Novel Multi-Layered Device of Polycrystalline Silicon Field Emitters and Thin Film Transistor for Field Emission Displays, IDW96, pp. 159-162.
Hidenori Gamo et al., Amorpous-Silicon-on-Glass Field Emitter Arrays, IEEE Electron Device Letters, vol. 17, Jun. 1996, pp. 261-263.
R. Baptist et al., Microtips and Resistive Sheet: A Theoretical Description of the Emissive Properties of This System; 9th International Vacuum Microelectronics Conference, St. Petersburg; pp. 19-23; Dec. 1996.
S.E. Huq et al., Fabrication of Gated Polycrystalline Silicon Field Emitters, 9th International Vacuum Microelectronics Conference, St. Petersburg; pp. 357-370; Dec. 1996.

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