Field emission device with over-etched gate dielectric

Details Field emission device with over-etched gate dielectric Field emission device with over-etched gate dielectric

1995-05-30

1997-04-15

O'Shea, Sandra L.

Electric lamp and discharge devices

Cathode ray tube

Beam deflecting means

313309, 313336, 313351, 313495, 313496, 313497, 313306, H01J 102, H01J 2970, H01J 162, H01J 146

Patent

active

056212720

ABSTRACT:
An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (22) spaced by an insulating spacer (125) from a cathode electrode including a conductive mesh (18). Arrays of microtips (14) are located in mesh spacings (16), within apertures (26) formed in extraction electrode (22) and subcavities (141) formed through apertures (26) in insulating spacer (125). Subcavities (141a) are open to row-adjacent and column-adjacent subcavities (141b, 141c) to form larger main cavities (144). Posts (143) of insulating spacer (125) separate diagonally-adjacent cavities (141d). Subcavities (141) are formed by over-etching a layer of insulating spacer material (25) through apertures (26) before or after forming microtips (14) through the same apertures (26). Over-etching reduces the dielectric constant factor of gate-to-cathode capacitance in the finished structure.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 4857161 (1989-08-01), Borel et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 5194780 (1993-03-01), Meyer
patent: 5225820 (1993-07-01), Clerc

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