Field emission device with over-etched gate dielectric

Details Field emission device with over-etched gate dielectric Field emission device with over-etched gate dielectric

1996-07-10

1999-05-11

Bradley, P. Austin

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 49, 445 50, H01J1/30;9/18

Patent

active

059021659

ABSTRACT:
An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (22) spaced by an insulating spacer (125) from a cathode electrode including a conductive mesh (18). Arrays of microtips (14) are located in mesh spacings (16), within apertures (26) formed in extraction electrode (22) and subcavities (141) formed through apertures (26) in insulating spacer (125). Subcavities (141a) are open to row-adjacent and column-adjacent subcavities (141b, 141c) to form larger main cavities (144). Posts (143) of insulating spacer (125) separate diagonally-adjacent cavities (141d). Subcavities (141) are formed by over-etching a layer of insulating spacer material (25) through apertures (26) before or after forming microtips (14) through the same apertures (26). Over-etching reduces the dielectric constant factor of gate-to-cathode capacitance in the finished structure.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4857161 (1989-08-01), Borel et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 5194780 (1993-03-01), Meyer
patent: 5225820 (1993-07-01), Clerc
patent: 5482486 (1996-01-01), Vaudaine et al.
patent: 5507676 (1996-04-01), Taylor et al.

Affiliated with

Also associated with

Rating

Field emission device with over-etched gate dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field emission device with over-etched gate dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field emission device with over-etched gate dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-242541