Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-05-17
2005-05-17
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S011000, C257S009000, C257S306000
Reexamination Certificate
active
06894306
ABSTRACT:
The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a method of depositing an aluminum nitride comprising layer over a semiconductor substrate includes positioning a semiconductor substrate within a chemical vapor deposition reactor. Ammonia and at least one of triethylaluminum and trimethylaluminum are fed to the reactor while the substrate is at a temperature of about 500° C. or less and at a reactor pressure from about 100 mTorr to about 725 Torr effective to deposit a layer comprising aluminum nitride over the substrate at such temperature and reactor pressure. In one aspect, such layer is utilized as a cell dielectric layer in DRAM circuitry. In one aspect, such layer is deposited over emitters of a field emission display. The invention contemplates DRAM and field emission devices utilizing such layer and alternate layers.
REFERENCES:
patent: 5062133 (1991-10-01), Melrose
patent: 5183684 (1993-02-01), Carpenter
patent: 5208848 (1993-05-01), Pula
patent: 5351276 (1994-09-01), Doll, Jr. et al.
patent: 5356608 (1994-10-01), Gebhardt
patent: 5386459 (1995-01-01), Veeneman et al.
patent: 5390241 (1995-02-01), Bales et al.
patent: 5392345 (1995-02-01), Otto
patent: 5404400 (1995-04-01), Hamilton
patent: RE35050 (1995-10-01), Gibbs et al.
patent: 5459780 (1995-10-01), Sand
patent: 5463685 (1995-10-01), Gaechter et al.
patent: 5536193 (1996-07-01), Kumar
patent: 5573742 (1996-11-01), Gebhardt
patent: 5599732 (1997-02-01), Razeghi
patent: 5605858 (1997-02-01), Nishioka et al.
patent: 5650361 (1997-07-01), Radhakrishnan
patent: 5656113 (1997-08-01), Ikeda et al.
patent: 5682386 (1997-10-01), Arimilli et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5689553 (1997-11-01), Ahuja et al.
patent: 5709928 (1998-01-01), Ikeda et al.
patent: 5767578 (1998-06-01), Chang et al.
patent: 5773882 (1998-06-01), Iwasaki
patent: 5783483 (1998-07-01), Gardner
patent: 5783716 (1998-07-01), Baum et al.
patent: 5786259 (1998-07-01), Kang
patent: 5786635 (1998-07-01), Alcoe et al.
patent: 5852303 (1998-12-01), Cuomo et al.
patent: 5977582 (1999-11-01), Fleming et al.
patent: 5977698 (1999-11-01), Lee
patent: 6072211 (2000-06-01), Miller et al.
patent: 6128293 (2000-10-01), Pfeffer
patent: 6181053 (2001-01-01), Yaniv et al.
patent: 6218293 (2001-04-01), Kraus et al.
patent: 6218771 (2001-04-01), Berishev et al.
patent: 6285050 (2001-09-01), Emma et al.
patent: 6294420 (2001-09-01), Tsu et al.
patent: 6307775 (2001-10-01), Forbes et al.
patent: 6358810 (2002-03-01), Dornfest et al.
patent: 6372530 (2002-04-01), Lee
patent: 6459096 (2002-10-01), Razeghi
patent: 401230779 (1989-09-01), None
Armas et al.,Chemical Vapor Deposition of Si3N4andALN on Carbon Fibers,Chemical Vapor Deposition 1987, Proceedings vols. 87-8, The Electrochemical Society 1060-1069 (1987).
Jimenez et al.,Preparation of aluminum nitride films by low pressure organometallic chemical vapor deposition,76-77 Surface and Coatings Technology 372-376 (1995).
Kobayashi et al.,Improved 2DEG Mobility in Selectively Doped GaAs/N-AIGaAs Grown by MOCVDUsing . . . , Musashino Elec. Comm. Lab., Tokyo, Japan, 2 pages (Sep. 10, 1984).
Liu et al.The surface chemistry of aluminum nitride MOCVD on alumina using trimethyl-aluminum and ammonia as precursors,320 Surface Science 145-160 (1994).
Pierson,The CVD of Ceramic Materials,Handbook of Chemical Vapor Deposition (CVD), 216-219 (Noyes Publications, NJ pre-1999).
Aluminum Nitride,5 CVD of Insulating Materials, Ch. 5.5.2, pp. 300-307 (Rees, Jr. ed. 1996).
Suzuki et al.,CVD of Polycrystalline Aluminum Nitride, Chemical Vapor Deposition 1987 Proceedings vols. 87-8, The Electrochemical Society, pp. 1060-1069 (1987).
Kraus Brenda D.
Lane Richard H.
Huynh Yennhu B.
Jr. Carl Whitehead
Wells St. John P.S.
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