Field emission device employing a layer of single-crystal silico

Details Field emission device employing a layer of single-crystal silico Field emission device employing a layer of single-crystal silico

1992-05-13

1994-06-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257577, 313308, 313309, H01J 146

Patent

active

053192338

ABSTRACT:
A variety of field emission devices and structures which employ non-substrate layers of single-crystal silicon. By employing non-substrate layers of single-crystal silicon, improved emission control is achieved and improved performance controlling devices are formed within the device structure.

REFERENCES:
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patent: 5090932 (1992-02-01), Dieumegard et al.
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patent: 5148078 (1992-09-01), Kane
patent: 5155420 (1992-10-01), Smith
patent: 5188977 (1993-02-01), Stengl et al.
Sze,Semiconductor Devices: Physic and Technology, 1985, pp. 328-329.

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