Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-31
2008-12-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S333000, C257S334000, C257SE29201
Reexamination Certificate
active
07465987
ABSTRACT:
A trench transistor structure having a field electrode arrangement formed in trenches is disclosed. In one embodiment, the field electrode arrangement is conductively connected to subvoltage taps of a voltage divider for the purpose of stabilizing the potentials on a longer time scale than dynamic charge reversal processes.
REFERENCES:
patent: 2005/0082591 (2005-04-01), Hirler et al.
patent: 10014660 (2002-08-01), None
patent: 10297349 (2005-01-01), None
Hirler Franz
Krumrey Joachim
Rieger Walter
Dicke Billig & Czaja, PLLC
Infineon Technologies Austria AG
Pert Evan
Tran Tan N
LandOfFree
Field electrode trench transistor structure with voltage... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field electrode trench transistor structure with voltage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field electrode trench transistor structure with voltage... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4025606