Field-effect-type semiconductor device

Details Field-effect-type semiconductor device Field-effect-type semiconductor device

2005-08-16

2005-08-16

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S341000, C257S342000

Reexamination Certificate

active

06930353

ABSTRACT:
It is intended to provide a field-effective-type semiconductor device that can let low ON-resistance and non-excessive short-circuit current go together by effectively using its channel width and prevents device from destruction. In a field-effective-type semiconductor device, a semiconductor region arranged between gate electrodes106has stripe-patterned structure consisting of an N+emitter region104and a P emitter region. The P emitter region is constituted by P channel region103of low concentration and P+emitter region100of high concentration. The N+emitter region104,the P channel region103,and the P+emitter region100are in contact with the emitter electrode109.Thereby, a channel width X is limited to the extent that is enough for ON current under normal operation state. That is, low ON-resistance and not excessive short-circuit current can go together in the field-effective-type semiconductor device.

REFERENCES:
patent: 6803628 (2004-10-01), Hamada
patent: 2004/0084725 (2004-05-01), Nishiwaki et al.
patent: 2002-100770 (2002-04-01), None

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