Field effect Trench transistor having lightly doped epitaxial re

Details Field effect Trench transistor having lightly doped epitaxial re Field effect Trench transistor having lightly doped epitaxial re

1992-07-24

1999-06-08

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257330, 257342, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059106697

ABSTRACT:
A DMOS field effect transistor having its gate electrode located in a trench includes a lightly doped epitaxial layer overlying the usual epitaxial layer. The trench penetrates only part way through the upper epitaxial layer which is more lightly doped than is the underlying lower epitaxial layer. The lightly doped upper epitaxial layer reduces the electric field at the bottom of the trench, thus protecting the gate oxide from breakdown during high voltage operation. Advantageously the upper portion of the lightly doped upper epitaxial layer has little adverse effect on the transistor's on resistance.

REFERENCES:
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4803532 (1989-02-01), Mihara et al.
patent: 4941026 (1990-07-01), Temple
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5138422 (1992-08-01), Fujii et al.
patent: 5168331 (1992-12-01), Yilmaz

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