Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-10
2007-07-10
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S192000, C257S255000, C257S353000, C257S614000, C257S615000, C257SE29068, C257SE29089, C257SE29090, C257SE29105
Reexamination Certificate
active
10939713
ABSTRACT:
A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
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Bucher Ernst
Gershenson Michael E.
Kloc Christian
Podzorov Vitaly
Lucent Technologies - Inc.
Maldonado Julio J.
McCabe John F.
Rutgers The State University of New Jersey
Smith Matthew
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