Field effect transistors with dielectric source drain halo...

Details Field effect transistors with dielectric source drain halo... Field effect transistors with dielectric source drain halo...

2006-01-09

2008-03-11

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S411000, C257S213000, C257SE21008, C257S051000, C257S032000, C257S277000, C257S561000

Reexamination Certificate

active

07342266

ABSTRACT:
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device area of the semiconductor substrate, on one side of the gate conductor, and a source region is formed in the active device area of the semiconductor substrate, on an opposite side of the gate conductor. A dielectric halo or plug is formed in the active area of said semiconductor substrate, the dielectric halo or plug disposed in contact between the drain region and a body region, and in contact between the source region and the body region.

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