Field effect transistors on spinel substrates

Details Field effect transistors on spinel substrates Field effect transistors on spinel substrates

1991-05-24

1995-09-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257194, 257615, H01L 29161

Patent

active

054480841

ABSTRACT:
A field effect transistor including a substrate comprised of a material having a spinel crystal structure and a buffer layer lattice matched to the crystal structure of the substrate comprising gallium aluminum indium arsenide is described. Several types of field effect transistors are possible with the described substrate arrangement, including metal semiconductor field effect transistors, insulating gate field effect transistors, pseudomorphically strained and pseudomorphically strain compensated metal semiconductor field effect transistors, as well as, high electron mobility transistor structures.

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