Field effect transistors and methods for manufacturing field...

Details Field effect transistors and methods for manufacturing field... Field effect transistors and methods for manufacturing field...

2007-01-30

2007-01-30

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S283000, C438S284000

Reexamination Certificate

active

10926874

ABSTRACT:
FETs and methods for fabricating FETs are disclosed. An illustrated method comprises forming a first insulating layer on a semiconductor substrate; forming a first conductive layer for a fin on the first insulating layer; etching the first conductive layer so that an area of a lower part of the first conductive layer is wider than an area of an upper part of the first conductive layer; forming voltage adjust regions through an ion implantation method; forming a gate insulating layer through a forming gas annealing method; forming a second conductive layer; forming LDD regions by implanting ions into the first conductive layer; forming sidewall spacers adjacent the gate insulating layer; and forming source/drain regions adjacent to the sidewall spacers by implanting ions into the first conductive layer.

REFERENCES:
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6251761 (2001-06-01), Rodder et al.
patent: 6613658 (2003-09-01), Koyama et al.
patent: 2002/0011612 (2002-01-01), Hieda
patent: 2003/0113972 (2003-06-01), Hayashi et al.
patent: 010045239 (2001-05-01), None

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