Field effect transistors and method of forming field effect tran

Details Field effect transistors and method of forming field effect tran Field effect transistors and method of forming field effect tran

1999-07-02

2000-09-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257410, 257411, 257412, 257760, 257761, H01L 2976

Patent

active

061147354

ABSTRACT:
The invention includes field effect transistors and methods of forming field effect transistors. In one implementation, a field effect transistor includes a semiconductive channel region and a gate construction operatively proximate the channel region. The gate construction includes a conductive gate region and a gate dielectric region intermediate the channel region and the conductive gate region. The gate dielectric region includes a Ta.sub.2 O.sub.5 comprising layer and a SiO.sub.2 comprising layer intermediate the Ta.sub.2 O.sub.5 comprising layer and the channel region. The conductive gate region includes at least two different material layers, with one of the at least two layers comprising a first conductive material and another of the at least two layers comprising a conductive metal nitride which is received intermediate the Ta.sub.2 O.sub.5 comprising layer and the one layer. In one implementation in a field effect transistor gate, the gate dielectric region includes a Ta.sub.2 O.sub.5 comprising layer and a SiO.sub.2 comprising layer intermediate the Ta.sub.2 O.sub.5 comprising layer and the conductive gate region. The gate dielectric layer region is substantially void of a SiO.sub.2 comprising layer intermediate the Ta.sub.2 O.sub.5 comprising layer and the conductive gate region.

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