Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-19
2005-04-19
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S377000, C257S388000, C257S412000
Reexamination Certificate
active
06882017
ABSTRACT:
A field effect transistor includes a pair of source/drain regions having a channel region positioned therebetween. A gate is positioned operatively proximate the channel region. The gate includes semiconductive material conductivity doped with at least one of a p-type or n-type conductivity enhancing impurity effective to render the semiconductive material electrically conductive, a silcide layer and a conductive diffusion barrier layer effective to restrict diffusion of p-type or n-type conductivity enhancing impurity. The conductive diffusion barrier layer includes TiWxNy. Integrated circuitry is also disclosed.
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Micro)n Technology, Inc.
Nadav Ori
Wells St. John P.S.
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