Field effect transistor with trench-isolated drain

Details Field effect transistor with trench-isolated drain Field effect transistor with trench-isolated drain

2011-08-23

2011-08-23

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257SE29256, C438S296000, C438S430000

Reexamination Certificate

active

08004039

ABSTRACT:
A MOS transistor includes a body region of a first conductivity type, a conductive gate and a first dielectric layer, a source region of a second conductivity type formed in the body region, a heavily doped source contact diffusion region formed in the source region, a lightly doped drain region of the second conductivity type formed in the body region where the lightly doped drain region is a drift region of the MOS transistor, a heavily doped drain contact diffusion region of the second conductivity type formed in the lightly doped drain region; and an insulating trench formed in the lightly doped drain region adjacent the drain contact diffusion region. The insulating trench blocks a surface current path in the drift region thereby forming vertical current paths in the drift region around the bottom surface of the trench.

REFERENCES:
patent: 2002/0013029 (2002-01-01), Hwang
patent: 2004/0097019 (2004-05-01), de Fresart et al.
patent: 2008/0067615 (2008-03-01), Kim
patent: 2008/0315306 (2008-12-01), Yoo et al.
patent: 2009/0072310 (2009-03-01), Koo et al.
patent: 2058862 (2009-05-01), None

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