Field effect transistor with thin gate electrode and method...

Details Field effect transistor with thin gate electrode and method... Field effect transistor with thin gate electrode and method...

2006-10-13

2008-05-20

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S241000, C438S258000, C438S199000, C438S301000, C257SE21400, C257SE21404, C257SE21382

Reexamination Certificate

active

07374980

ABSTRACT:
A field effect transistor and a method of fabricating the field effect transistor. The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation; a source and a drain formed in the body and on opposite sides of a channel formed in the body; and a gate dielectric layer between the body and an electrically conductive gate electrode, a bottom surface of the gate dielectric layer in direct physical contact with a top surface of the body and a bottom surface the gate electrode in direct physical contact with a top surface of the gate dielectric layer, the gate electrode having a first region having a first thickness and a second region having a second thickness, the first region extending along the top surface of the gate dielectric layer over the channel region, the second thickness greater than the first thickness.

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