Field effect transistor with stressed channel and method for...

Details Field effect transistor with stressed channel and method for... Field effect transistor with stressed channel and method for...

2005-04-26

2005-04-26

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S296000, C438S405000, C438S424000

Reexamination Certificate

active

06884667

ABSTRACT:
Field effect transistor with increased charge carrier mobility due to stress in the current channel22. The stress is in the direction of current flow (longitudinal). In PFET device, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film34in an area32under the channel. The compressive film pushes up on the channel22, causing it to bend. In PFET devices, the compressive film is disposed under ends31of the channel (e.g. under the source and drain), thereby causing compression in an upper portion22A of the channel. In NFET devices, the compressive film is disposed under a middle portion40of the channel (e.g. under the gate), thereby causing tension in the, upper portion of the channel. Therefore, both NFET and PFET device can be enhanced. A method for making the devices is included.

REFERENCES:
patent: 6624478 (2003-09-01), Anderson et al.
patent: 6680240 (2004-01-01), Maszara

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